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Description
INFINEON IRF640NPBF MOSFET Transistor, N Channel, 18 A, 200 V, 150 mohm, 10 V, 4 VThe IRF640NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO 220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications. Drain to source voltage Vds is 200V Gate to source voltage is 20V On
- Drain to source voltage Vds is 200V
- Gate to source voltage is �20V
- On resistance Rds(on) of 150mohm
- Power dissipation Pd of 150W at 25�C
- Continuous drain current Id of 18A at Vgs 10V and 25�C
- Operating junction temperature range from -55�C to 175�C
Applications
Power Management, Industrial, Portable Devices, Consumer Electronics
Product details
| Power Dissipation Pd | 150W |
| Operating Temperature Max | 175�C |
| Continuous Drain Current Id | 18A |
| Transistor Polarity | N Channel |
| No. of Pins | 3Pins |
| Threshold Voltage Vgs | 4V |
| Product Range | - |
| Automotive Qualification Standard | - |
| Drain Source Voltage Vds | 200V |
| Rds(on) Test Voltage Vgs | 10V |
| Transistor Case Style | TO-220AB |
| On Resistance Rds(on) | 0.15ohm |
| MSL | - |
Other details
| Brand | INFINEON |
| Part Number | IRF640NPBF |
| Quantity | Each |
| Technical Data Sheet EN | |
| Product Change Notice EN |
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